Fabrication of pbxs1-x films photoconductive detectors

الملخص EN

A polycrystalline PbxS1-x alloys with various Pb content (0.50, 0.51, 0.52, 0.54 and 0.55) have been prepared successfully.

A photoconductive detector PbxS1-x film has been fabricated by depositing 1.5?m of PbxS1-x on Si (n- type) substrate with (111) direction by flash thermal evaporation at different x content and annealing temperature (Ta).

Photoconductive properties, I-V characteristic, Spectral Response (R?), Quantum Efficiency (?), Noise Equivalent Power (NEP), Specific Detectivity (D*), and time constant have been studied.

The study of detector parameters exhibited two peaks for spectral , quantum efficiency and specific detectivity.