The effects of sn doping on some electrical and optical properties of CdS films

الملخص EN

-CdS and CdS:Sn films (at Sn percentage of 10) were deposited onto glass substrates at room temperature (R.T) using thermally evaporation technique .The effect of Sn on some physical properties of the films were presented.

The pure and doped CdS films were polycrystalline with zincblende structure with lattice constants,a, of 5.84 oA and 5.86 oA respectively.

The resistivity,r , varies from 0.37´103W.cmfor pure CdS film to 2.5´106W.cm for doped film at room temperature.

As a result of the doping ,the optical band gap (Eg) was shifted from 2.49eV for pure CdS down to 2.3eV for Sn doped CdS films.

The band gap energy (Eg) that is evaluated from photocurrent measurement found to be in a good agreement on a qualitative level with that obtained by optical absorption measurement.