Electromodulation spectroscopy study of semiconductor structures

الملخص EN

We are presenting here few examples of the application of electro modulation techniques, e.g.

photo reflectance and photo transmittance, as excellent methods for the investigation of semiconductor device structures.

The discussion is narrowed down to low-dimensional structures used as an active part of the infrared optoelectronic devices : from new material (GaInAsN) double quantum wells, good candidate for 1.3 mm and 1.55 mm telecommunication lasers, through InGaSb / GaSb quantum wells pretending to the application in the infrared gas sensors, to 980 nm InGaAs / GaAs quantum dot laser pump source for erbium doped fiber amplifiers (EDFA).

Contactless modulation techniques like photo reflectance or photo transmittance can be successfully used for the investigation of low-dimensional systems being an active part of the semiconductor device.

The derivative-like spectra gives sensitivity high enough to probe excited states even in small volume objects like self-assembled quantum dots, and also at room temperature