The performance of hydrogenated amorphous silicon charge coupled devices

الملخص EN

From gas phase and by glow-discharge method Hydrogenated Amorphous Silicon Charged Coupled devices have been deposited.

A detailed practical study has been carried out.

The most important parameter, the transfer efficiency, was found to depend strongly upon the device gate number and the clock frequency.

The best efficiency achieved was 97.7 % and that was at frequency of 250 Hz.