High speed dual-msm photodiodes on InP, Fe

الملخص EN

Metal-Semi Conductor-Metal (MSM) Photo detectors on semi-insulting Inp : Fe with a lateral planer structure (double Scotty photodiode) have been fabricated.

the detector exhibits low dark currents of about 6 nA, an impulse response time of 15 spec, Full width at half maximum (FWHM)(25 Spec), and an internal quantum efficiency of 70 %, all at 10V bias.

Response time is almost independent on biasing voltage, while the dependence of photocurrent on biasing reflects the increasing in the quantum efficiency.

The photocurrent increase linearly with incident power radiation for all bias voltage greater than 0.

6v.