Dark and light characteristics of Sb-Se heterojunction formed on silicon substrate

الملخص EN

n this work, the dark and light characteristics of Se / Sb thin film heterojunction deposited on a p-type silicon substrate were studied.

Reasonable enhancements in electrical and spectral characteristics of the achieved structure were indicated throughout l-V and C-V measurements in dark and light.

These results are compared to the cases of Se / Si or Sb / Si individually.