Ir-blind visible silicon detecto

الملخص EN

In the present paper, silicon p-n junction detector of 600 ± 25 nm peak response has been characterized.

This peak was obtained by depositing high purity Au thin film onto sensitive side of the p-n junction (donor-side), this film reduces the responsively in the near-IR region (800-1100) nm and leads to peak response at 600 nm.

The white light photovoltaic characteristics, spectral responsively, and quantum efficiency are greatly depended on the photon transmission of Au film.

Experimental results showed that the detector responsively in the near IR region was reduced to about 18.5 % from its initial value after depositing 30 nm Au film.