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Pulsed laser deposition of sometco films for optoelectronic application
مقدم أطروحة جامعية
الجامعة
الجامعة التكنولوجية
الكلية
-
القسم الأكاديمي
قسم العلوم التطبيقية
دولة الجامعة
العراق
الدرجة العلمية
دكتوراه
تاريخ الدرجة العلمية
2006
الملخص الإنجليزي
Design and construction of reactive pulsed laser deposition system have been carried out, and used in the preparation of High quality transparent conductive ZnO and Cd O thin films, using (400 use) Nd-YAG laser to the ablation of Zn and Cd targets respectively, on silicon and glass substrates.
Many growth parameters have been considered in this work to specify the optimum conditions, namely, laser energy density, number of shots, oxygen background pressure and substrate temperature.
Optical, electrical and structural properties of ZnO and Cd O films are investigated and analyzed extensively with respect to growth condition.
The optical properties of ZnO films reveal that the optical band gap varied over the range (3-3.15) eV and (2.4-2.7) eV for ZnO and Cd O, respectively depending on reactive gas pressure.
High transparency reached about 85 % of that achieved with ZnO film, which itself decreases sharply with decreasing oxygen pressure.
The electrical properties of undoes ZnO and Cd O films confirm that these films are n-type and highly conductive.
The electrical resistivity of both films is found to be very sensitive to substrate temperature and oxygen pressure.
Lowest resistivity of about (0.0074) Q.cm is found for Cd O film prepared at (350 Torr).
Heterojunction photo detector has been fabricated by depositing both Cd O and ZnO films on monocrystalline (111) p-type silicon substrate at different conditions, the main parameters of ZnO / p-Si, and Cd O / p-Si photo detectors are investigated.
The responsively of the detectors found to be (0.2, 0.22) A / W, while the directivity found (2.13, 3.82) x 10t2 cm.HzI / 2.Wl.
The XRD spectra revealed that the highly oriented grain in the (101) direction for the ZnO film and in the (111) direction for the Cd O film can be obtained with narrow peak at best preparation conditions of (02 pressure = 300 Torr, Tsub = 473K for Zn O) and (02 pressure = 350 Torr, Tsub = 523K for Cd O).
All films grown at these conditions exhibit full stoichiometric type.
التخصصات الرئيسية
الموضوعات
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
al-Waisy, Evan T. Salim. (2006). Pulsed laser deposition of sometco films for optoelectronic application. (Doctoral dissertations Theses and Dissertations Master). University of Technology, Iraq
https://search.emarefa.net/detail/BIM-305703
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
al-Waisy, Evan T. Salim. Pulsed laser deposition of sometco films for optoelectronic application. (Doctoral dissertations Theses and Dissertations Master). University of Technology. (2006).
https://search.emarefa.net/detail/BIM-305703
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
al-Waisy, Evan T. Salim. (2006). Pulsed laser deposition of sometco films for optoelectronic application. (Doctoral dissertations Theses and Dissertations Master). University of Technology, Iraq
https://search.emarefa.net/detail/BIM-305703
لغة النص
الإنجليزية
نوع البيانات
رسائل جامعية
رقم السجل
BIM-305703
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
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تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر
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