Front-wall illumination of spray-deposited PbS-SI HJ detector

الملخص EN

(n-p) PbS-Si HJ detector has been fabricated by py roly tic spray ing of PbS heterolay er onto p-ty pe silicon wafer.

PbS-side of illumination in the wavelength range (450-1150 nm) revealed that the quantum effic iency plateau fairly conforms to that of Si homojunction.

Signific ant spec ific de tec tivity of about 8.5 x 1011 cm Hz1/2 W-1 has been obtaine d at 850 nm wavelength.

Signal to noise ratio revealed an optimum ope ration voltage at 2.5 V.