Structural and D. C. conductivity investigation of the ternary alloy system a-AlXGa1-x As : H films prepared by new deposition method

الملخص EN

In this paper Alx Ga1-x As : H films have been prepared by using new deposition method based on combination of flash-thermal evaporation technique.

The thickness of our samples was about 300nm.

The Al concentration was altered within the 0 x4.

The results of X- ray diffraction analysis (XRD) confirmed the amorphous structure of all AlXGa1-x As : H films with x 40 and annealing temperature (Ta) < 200°C.

The temperature dependence of the DC conductivity GDC with various Al content has been measured for AlXGa1-x As : H films.

We have found that the thermal activation energy Ea depends of Al content and Ta, thus the value of Ea were approximately equal to half the value of optical gap.