Current-voltage and capacitance-voltage characteristics of SeSi heterojunction prepared by DC planar magnetron sputtering technique

الملخص EN

In this work, the effect of annealing temperature on the electrical properties are studied of p-Se / n-Si solar cell, which p-Se are deposit by DC planar magnetron sputtering technique on crystal silicon.

The chamber was pumped down to 2 × 10−5 mbar before admitting the gas in.

The gas was Ar.

The sputtering pressure varied within the range of 4 x 10-1 – 8 x 10-2 mbar by adjusting the pumping speed through the opening control of throttle valve.

The electrical properties are included the C-V and I-V measurements.

From C-V measurements, the Vbi are calculated while from I-V measurements, the efficiency of solar cell is calculated.