Growth and electrical characterization of TlInTe2 single crystal

الملخص EN

High efficiency design for single crystal growth from melt based on Bridgman technique is constructed locally and used for growing TlInTe2 crystals.

Measurements of Hall coefficient and DC electrical conductivity covering a temperature range from 158 to 473 K were conducted.

The investigated samples have P-Type conductivity with RH of 2.3 × 109 cm3 / coul.

at room temperature and carrier concentrations as 2.81×109 cm-3.

Energy gap ΔEg and ionization energy Δ Ea were estimated as 0.72 eV and 0.113 eV, respectively.

The diffusion coefficient, diffusion length, as well as relaxation time were evaluated, and the scattering mechanism of charge carrier was checked.