NANO and micro indium oxide structure prepared using laser ablation method

الملخص EN

In the present work, effect of laser energy on optical and morphological properties of In2O3 trioxide thin film has been carried out using Reactive Pulsed Laser as a Deposition technique (RPLD).

Q-switch Nd-YAG laser with (λ = 1.06nm, tb = 7nsec) and different energy's has been use to ablated pure indium target and deposited on glass substrates and constant substrate temperature of (333K).

The results films show that high transparency reached to about (80-95) % can be achieved with In2O3 film which itself decreases sharply with the decreasing of laser energy while the optical band gap is( 3.6-3.8) eV at optimum laser energy (400mj ).

The optical properties of the prepared include optical microscopic measurement, optical transition measurement, surface uniformity measurement and FTIR.