Atom (Ion)‎-surface scattering process : configurations interaction method

الملخص EN

The shape effect of the surface density of state on the charge transfer in atom(ion)-surface scattering process is investigated in detail by formulating the configurations interaction (CI) method.

The method is applied to the formation of exited silicon ion SiP +* Pfrom the scattering of SiP2 + P from Si surface as we used as well the method to clarify the nonlinear behaviors of the HP + P survival probability as a function of the scattering angle during its specular scattering from graphite (HOPG) surface.