Study of some structural properties of porous silicon preparing by photochemical etching

الملخص EN

Porous Silicon (PSi) has been produced in this work by using Photochemical (PC) etching process by using a hydrofluoric acid (HF) solution.

The irradiation has been achieved using quartz-tungsten halogen lamp.

The influence of various irradiation times on the properties of PSi اmaterial such as layer thickness, etching rate and porosity was investigated in this work too.

The XRD has been studied to determine the crystal structure and the crystalline size of PSi material.