Room temperature photodetector based on ANISOTYPE (n-p)‎ Ge-Si heterojunction

الملخص EN

In this work we present a detailed study on anisotype nGe-pSi heterojunction (HJ) used as photodetector in the wavelength range (500-1100 nm).

I-V characteristics in the dark and under illumination, C-V characteristics, minority carriers lifetime (MCLT), spectral responsivity, field of view, and linearity were investigated at 300K.

The results showed that the detector has maximum spectral responsivity at λ = 950 nm.

The photo-induced open circuit voltage decay results revealed that the MCLT of HJ was around 14.4 μs.