Some of the physical properties for ZnO thin films prepard by pulse laser deposition technique for UV-NIR detection application

الملخص EN

ZnO / Si heterojunction has been constructed on (001) oriented silicon substrate using a (7 ns1 J) Q-swiched Nd : YAG laser = 1.06 m for the ablation of ZnO target in the presence of oxygen gas as a back ground atmosphere, in order to prepare ZnO TCO's films.

Electrical and structural properties of these film has been investicated reaching to the optimum oxygen pressure at which the device has been prepared.

ZnO films, formed at 300mtorr oxygen ambient, showed an electrical resistivity of 0.0221 cm, without using post-deposition heat treatment.

The electrical properties of the prepared device has been carried out and later the detectors parameter has been measured.