Study of the electrical properties for Cr+4 : YAG crystal in a passively q-switched-Mode locked (QML)‎ Nd : Gdvo4 laser at 912 Nm

الملخص EN

The electrical properties of Cr + 4 : YAG crystal had been calculated as [ dielectric constant (ε) dielectric time (τdie), permittivity (Є) , permeability (μ), electrical response time (TE), laser wave propagation speed through crystal (VP), skin depth (δ), electrical susceptibility (χ), crystal impedance (Z), electrical conductivity (σ), induced electrical polarization (Pin), molar polarization (ρp) and wave number (K)] and some of other properties as ( transmittance (T) and refractive index (n)) at (90 % and 95 %) initial transmission for saturable absorber (Tu) , in the passively Q-switched mode–locked (QML) Nd : GdVO4 laser system at (912nm).

It can be concluded that each of electrical and magnetic flux density in Cr + 4 : YAG crystal which was incurrence to laser wave are mainly dependent on free electrons exists in it, while the electrical polarization are dependent on the number of crystal molecules in the ground-state.