Fabrication and characterization of schottky gate-field effect transistor utilizing pyromallitic 3, 4 benzoic acid di imide

الملخص EN

Schottky gate-Field Effect Transistor was fabricated using pyromallitic 3, 4-benzoid acid as an effecting layer.

Cast method was employed in depositing the polymeric material.

Electrical characteristic including output and transfer characteristic was carried out at room temperature.

Electrical analysis howed that the device has a normally on mode with relatively high threshold and pinch off voltage.