Q-switched Nd : YAG laser annealing of phosphorus diffused silicon photodiodes

الملخص EN

Improvement of optoelectrical characteristics of phosphorus diffused silicon photodiodes by Q-switched Nd : YAG laser pulses was investigated.

Laser pulses have dissolved the precipitation of phosphorus resulted during thermal diffusion process.

The experimental data show that responsivity higher than (0.32 A/W) at 850 nm can be achieved after laser annealing with (1.5 MW/cm2) for 6 shots.