Study the effects of annealing temperature on some optical properties of Se : 2% As thin films

الملخص EN

The optical gap (Eopt) and tailing(AE) for Sc:2%As thin films prepared by vacuum evaporation as a function of annealing temperature are studied in the photon energy range (1.0 to 5.4 ) eV.

Thin film of Se:2%As was found to be indirect gap with energy gap of (1.978 , 2.082 ,2.120 , 2.230) eV at annealing temperature (295 , 370 , 445 , 520)K respectively.

The E0pt and AE of Se:2%As films as a function of annealing temperature showed an increase in Eopl and a decrease in AE with the temperature.

This behavior may be related to structural defects and dangling bands.

The absorption coefficient for Se:2%As films exhibits exponential dependence on photon energy obeying Urbach's rule in the absorption edge.