To Enhance Performance of Light Soaking Process on ZnSCuIn1-xGaxSe2 Solar Cell

الملخص EN

The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied.

The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV.

The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM.

The light soaking effect of photoactive film for 10 min results in an increase in F.F.

from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω.

The efficiency of the devices improved from 8.12 to 9.50%.