Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

المؤلفون المشاركون

Oliver, Alicia
Reyes Esqueda, Jorge Alejandro
Bornacelli, Jhovani
Rodríguez Fernández, Luis

المصدر

Journal of Nanotechnology

العدد

المجلد 2013، العدد 2013 (31 ديسمبر/كانون الأول 2013)، ص ص. 1-9، 9ص.

الناشر

Hindawi Publishing Corporation

تاريخ النشر

2013-01-15

دولة النشر

مصر

عدد الصفحات

9

التخصصات الرئيسية

العلوم الهندسية و تكنولوجيا المعلومات
الكيمياء

الملخص EN

We studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy.

The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system.

After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase.

The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion .

Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions.

However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix.

As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified.

We have selected different atmospheres (air, H2/N2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation.

Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

نمط استشهاد جمعية علماء النفس الأمريكية (APA)

Bornacelli, Jhovani& Reyes Esqueda, Jorge Alejandro& Rodríguez Fernández, Luis& Oliver, Alicia. 2013. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation. Journal of Nanotechnology،Vol. 2013, no. 2013, pp.1-9.
https://search.emarefa.net/detail/BIM-494609

نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)

Bornacelli, Jhovani…[et al.]. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation. Journal of Nanotechnology No. 2013 (2013), pp.1-9.
https://search.emarefa.net/detail/BIM-494609

نمط استشهاد الجمعية الطبية الأمريكية (AMA)

Bornacelli, Jhovani& Reyes Esqueda, Jorge Alejandro& Rodríguez Fernández, Luis& Oliver, Alicia. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation. Journal of Nanotechnology. 2013. Vol. 2013, no. 2013, pp.1-9.
https://search.emarefa.net/detail/BIM-494609

نوع البيانات

مقالات

لغة النص

الإنجليزية

الملاحظات

Includes bibliographical references

رقم السجل

BIM-494609