Modeling and Simulation of Special Shaped SOI Materials for the Nanodevices Implementation

الملخص EN

In the industrial chain of the nanomaterials for electronic devices, a main stage is represented by the wafer characterization.

This paper is starting from a standard SOI wafer with 200 nm film thickness and is proposing two directions for the SOI materials miniaturization, indexing the static characteristics by simulation.

The first SOI nanomaterial is a sub-10 nm Si-film with a rectangular shape.

The influence of the buried interface fixed charges has to be approached by the distribution theory.

The second proposal studies the influence of the vacuum cavity in a “U” shaped SOI nanofilm.

In all cases, with rectangular or “U” shape film, the simulations reveal transfer characteristics with a maximum and output characteristics with a minimum for sub-10 nm thickness of the SOI film.