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Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications
المؤلفون المشاركون
Tiwari, Sudarshan
Mishra, R. A.
Rai, Sanjeev
Sahu, Jyotsna
Dattatray, Wanjul
المصدر
العدد
المجلد 2012، العدد 2012 (31 ديسمبر/كانون الأول 2012)، ص ص. 1-7، 7ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2012-12-11
دولة النشر
مصر
عدد الصفحات
7
التخصصات الرئيسية
الملخص EN
The FinFETs recently have been the rallying point for the engineers as far as the development of the technology is concerned.
The authors here have tried successfully to compare the performance of 30 nm conventional triple gate (Conv) FinFET structure with that of partially cylindrical (PC) FinFET.
In PC-FinFET the fin is divided into two regions.
Region I is partially cylindrical and has curvature of half of the fin width, and Region II is like a conventional FinFET (having flat region).
The results show that there is considerable improvement in Ion, Ioff, and subsequent suppression of short channel effects, that is, subthreshold slope, DIBL, self heating effect, and so forth.
The improvement has also been felt in series resistance in PC-FinFET as compared to C-FinFET.
It is noteworthy also to mention that in PC-FinFET the corner of fin is rounded thus reducing the side wall area which further reduces the gate capacitance reducing the intrinsic delay.
The DC and transient analysis of CMOS inverter using C-FinFET and PC-FinFET have been done which shows that PC-FinFET inverter has reduced propagation delay as compared to C-FinFET.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Rai, Sanjeev& Sahu, Jyotsna& Dattatray, Wanjul& Mishra, R. A.& Tiwari, Sudarshan. 2012. Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications. ISRN Electronics،Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-501330
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Rai, Sanjeev…[et al.]. Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications. ISRN Electronics No. 2012 (2012), pp.1-7.
https://search.emarefa.net/detail/BIM-501330
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Rai, Sanjeev& Sahu, Jyotsna& Dattatray, Wanjul& Mishra, R. A.& Tiwari, Sudarshan. Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications. ISRN Electronics. 2012. Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-501330
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-501330
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
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