Modelling of an Esaki Tunnel Diode in a Circuit Simulator

الملخص EN

A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented.

A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated.

The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued.