Fabrication and characteristics study of cdo si heterojunction

الملخص EN

In the present paper CdO / Si heterojunction has been prepared by spray pyrolysis method , electrical characteristics include I-V , C-V , were studied the build-in- potential equal 1.7 eV and optoelectronic characteristics include I-V illumination condition, photovoltaic, responsively, quantum efficiency were studied.

the ideality factor to be 2.93 and short circuit photocurrent 170μA, open circuit photovoltge 120mV at AM1 condition and two peaks responsively were found , first peak at region 600 ± 20nm this peak due to absorb of light in CdO through band-to-band absorption while second region at 800 ± 30nm which due to the Si band gap.

Cadmium oxide, heterojunction, thermal oxide, Transparent conducting oxides, spray pyrolysis.