Structural and Optical Characteristics of γ-In2Se3 Nanorods Grown on Si Substrates

الملخص EN

This study attempted to grow single-phase γ-In2Se3 nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD).

High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3 nanorods are singularly crystallized in the γ phase.

The photoluminescence of γ-In2Se3 nanorods at 15 K was referred to as free and bound exciton emissions.

The bandgap energy of γ-In2Se3 nanorods at room temperature was determined to be ~1.99 eV, obtained from optical absorption.