Structural and Optical Characteristics of γ-In2Se3 Nanorods Grown on Si Substrates
Joint Authors
Lan, S. M.
Lin, T. Y.
Yang, M. D.
Hu, C. H.
Shen, J. L.
Tong, S. C.
Wu, C. H.
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-10-05
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Civil Engineering
Abstract EN
This study attempted to grow single-phase γ-In2Se3 nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD).
High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3 nanorods are singularly crystallized in the γ phase.
The photoluminescence of γ-In2Se3 nanorods at 15 K was referred to as free and bound exciton emissions.
The bandgap energy of γ-In2Se3 nanorods at room temperature was determined to be ~1.99 eV, obtained from optical absorption.
American Psychological Association (APA)
Yang, M. D.& Hu, C. H.& Tong, S. C.& Shen, J. L.& Lan, S. M.& Wu, C. H.…[et al.]. 2011. Structural and Optical Characteristics of γ-In2Se3 Nanorods Grown on Si Substrates. Journal of Nanomaterials،Vol. 2011, no. 2011, pp.1-5.
https://search.emarefa.net/detail/BIM-512916
Modern Language Association (MLA)
Yang, M. D.…[et al.]. Structural and Optical Characteristics of γ-In2Se3 Nanorods Grown on Si Substrates. Journal of Nanomaterials No. 2011 (2011), pp.1-5.
https://search.emarefa.net/detail/BIM-512916
American Medical Association (AMA)
Yang, M. D.& Hu, C. H.& Tong, S. C.& Shen, J. L.& Lan, S. M.& Wu, C. H.…[et al.]. Structural and Optical Characteristics of γ-In2Se3 Nanorods Grown on Si Substrates. Journal of Nanomaterials. 2011. Vol. 2011, no. 2011, pp.1-5.
https://search.emarefa.net/detail/BIM-512916
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-512916
