Calculation of energy band gap of porous silicon based on the carrier transport mechanisms

الملخص EN

The energy band gap of photoluminescence porous silicon is calculated based on the analysis of the current-voltage characteristics and the measurements of the thermal activation energy of the zero bias and reverse bias currents of PS / n-Si porous silicon diodes at different temperatures.

The 2.1 eV band gap resulting from these electrical measurements agrees well with 2 eV measured in PL spectra.