Photonic devices based on porous silicon layers

الملخص EN

The optoelectronic properties of (Al / c-Si) and sandwich structure type (Al / PS / c-Si / Al) were reported.

The nanostructure porous silicon is obtained by photochemical etching without applying electric field.

The photosensitivity of (Al / PS / c-Si / Al) structure is determined by porous layer photoconduction.

Maximum spectral sensitivity of the porous layer is changed from (575-610) nm depending on preparation condition.