Fabrication and characterization CdO : In Si photovoltaic solar cell prepard by thermal evaporation

الملخص EN

In this work, CdO : In / Si heterojunction solar cell has been made by vacuum evaporation of cadmium oxide doped with 1 % of indium thin film onto glass and silicon substrates with rate deposition (3.9A / sec) and thickness(≈250nm).

XRD was investigated, the transmission was determined in range (300-1100) nm and the direct band gap energy is 2.43 eV, I-V characterization of the cell under illumination was investigated, the cell shows an open circuit voltage (Voc) of 0.6 Volt, a short circuit current density (Jsc) of 12.8 mA / cm2, a fill factor (F.F) of 0.66, and a conversion efficiency (η) of 5.2 %.