Effect of thin layer thickness of iron oxide prepared by Sol-Gel on the opto-electronic properties of the material

المؤلفون المشاركون

Farah, M. S.
Bazayn, A.
Sudayrah, S.

المصدر

Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.

الناشر

جامعة العربي بن مهيدي بأم البواقي

تاريخ النشر

2014-12-31

دولة النشر

الجزائر

عدد الصفحات

5

التخصصات الرئيسية

هندسة المواد والمعادن

الموضوعات

الملخص الإنجليزي

Thin Hematite iron oxide layers ( Fe2O3) were synthesized successfully using FeCl3 as precursor, ethanol as solvent and acetic acid as catalyst according to the sol-gel process and spin-coating technique.

The structural properties of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy, and optical properties by the UV-Vis spectroscopy.

This study shows a singular behavior of optical transmission characterized by two bearings and a clear dependence of optoelectronic parameters with film thikness.

نوع البيانات

أوراق مؤتمرات

رقم السجل

BIM-551119

نمط استشهاد جمعية علماء النفس الأمريكية (APA)

Farah, M. S.& Bazayn, A.& Sudayrah, S.. 2014-12-31. Effect of thin layer thickness of iron oxide prepared by Sol-Gel on the opto-electronic properties of the material. International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria). . Vol. 4, no. 2 (2014), pp.8-12.Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University.
https://search.emarefa.net/detail/BIM-551119

نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)

Farah, M. S.…[et al.]. Effect of thin layer thickness of iron oxide prepared by Sol-Gel on the opto-electronic properties of the material. . Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University. 2014-12-31.
https://search.emarefa.net/detail/BIM-551119

نمط استشهاد الجمعية الطبية الأمريكية (AMA)

Farah, M. S.& Bazayn, A.& Sudayrah, S.. Effect of thin layer thickness of iron oxide prepared by Sol-Gel on the opto-electronic properties of the material. . International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria).
https://search.emarefa.net/detail/BIM-551119