Influence of the edge effects on the MESFET transistor characteristics

المؤلفون المشاركون

Malal, sayda
Uzayzi, Sharifah
Zubat, Murad
Zir, Tawfiq

المصدر

Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.

الناشر

جامعة العربي بن مهيدي بأم البواقي

تاريخ النشر

2014-12-31

دولة النشر

الجزائر

عدد الصفحات

5

التخصصات الرئيسية

الفيزياء

الملخص الإنجليزي

A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, Our main aim in these sheet related on the one hand to the optimization of a two dimensional (2D) analytical model for the static characteristics of short gate-length GaAs MESFET‟s, this model takes into account the different physical specific phenomena of the device, and on the other hand to study the influence of the effect edge on the variation of some intrinsic elements (transconductance and drain conductance).

The model suggested has enables to us to calculate and trace the different series from curves.

The results obtained are well represented and interpreted.

نوع البيانات

أوراق مؤتمرات

رقم السجل

BIM-551275

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