Characteristics study of ZnO thin films by rapid thermal oxidation treatment technique

الملخص EN

In this paper preparation of good quality transparent conductive ZnO thin films by post-oxidation of vacuum evaporated Zn, on glass and silicon (p-type) as substrates, the oxidation was achieved in a short time (90 sec) which is known as rapid thermal oxidation.

One growth parameter has been considered to specify the optimum conditions the film thickness are (200,300,400 &500 nm).

The XRD spectra revealed a high oriented grain in the (002) lattice system which is hexagonal wurtzite and proved that the ZnO films have a polycrystalline structure.

Also, the morphological properties of ZnO films show that all films have a homogeneous surface morphology and it appears, to change significantly as a function of thickness.The energy gap of ZnO films decreases as the thickness increases.

The FTIR spectra indicate the existence of the distinct characteristic absorption peak at 472.56cm-1 for Zn-O stretching mode.

Study of effect I-V and C-V measurements of ZnO films with the increase thickness.

The photovoltaic properties confirmed that the photovoltaic depends strongly on the bias voltage and the amount of current produced by a photovoltaic device which is directly related to the number of photons absorbed.

C-V results demonstrated that the fabricated heterojunction is of abrupt type.

Also, the width of the depletion layer (w) follows the same behavior ( ) decreased while the charge carrier density ( ) was increased with the thickness increase.