Characterization of (CuInSeTe, Cuisse and CuInSTe)‎ CdS heterojunction

العناوين الأخرى

خواص المفارق الهجينة (CuInSeTe, CuInSSe and CuInSTe)‎ CdS

مقدم أطروحة جامعية

Umran, Duaa Adil

مشرف أطروحة جامعية

al-Jamil, Muzaffar Fuad
Hasan, Bushra Abbas

أعضاء اللجنة

Shaban, Salma M.
Muhammad, Muzaffar A.

الجامعة

جامعة بغداد

الكلية

كلية العلوم

القسم الأكاديمي

قسم الفيزياء

دولة الجامعة

العراق

الدرجة العلمية

ماجستير

تاريخ الدرجة العلمية

2011

الملخص الإنجليزي

The preparation of (CuInSeTe CuInSSe and CuInSTe) thin films at different substrates temperatures (303, 373 and 423) K with average thickness (700±8) nm have been performed by thermal evaporation technique on glass substrate and under vacuum of 10-5 mbar with rate of deposition 25nm/sec.

The structures of (CuInSeTe CuInSSe and CuInSTe,) bulk and films have been studied by X–ray diffraction technique.

The result reveals that the prepared alloys and thin films which were deposited at both substrate temperatures (373and 423) K have polycrystalline structures whereas as deposited thin films are amorphous.

The optical measurement shows that the (CuInSeTe CuInSSe and CuInSTe) films have direct energy gap and the energy gap (Eg opt) increases with the increase of substrate temperatures for all samples.

Also the optical constants such as refractive index (n), extinction coefficient (k) and dielectric constant (εr, εi) have been calculated.

Resistivity and Hall Effect measurements show that of (CIS'T, CIS'S and CIST) thin films is p-type semiconductors, the concentration of charge carriers, D.C conductivity decreases with increasing of depositing temperature.

The capacitances at reverse bias of (CuInSeTe/CdS CuInSSe/CdS, and CuInSTe/CdS) heterojunction are measured at frequency (10 KHz, 100 KHz and 1 MHz) the measurements indicate that all heterojunction are abrupt.

The capacitance decreases with increasing the reverse bias voltage, and substrates temperatures, while the built–in voltage value decrease with the increase of substrates temperatures.

التخصصات الرئيسية

الفيزياء

عدد الصفحات

81

قائمة المحتويات

• APA
• MLA
• AMA

لغة النص

الإنجليزية

نوع البيانات

رسائل جامعية

رقم السجل

BIM-606404