Fabrication and study of SnO2 UV-photodetector

العناوين الأخرى

تصنيع و دراسة كاشف التوصيل الضوئي أوكسيد القصدير للأشعة فوق البنفسجية

مقدم أطروحة جامعية

Ghafil, Azhar Shakir Nuri

مشرف أطروحة جامعية

Natiq, Naji Usamah
Suhayl, Abd Allah Muhsin

أعضاء اللجنة

Jasim, Amil Kazim
Ulwan, Ulwan M.

الجامعة

جامعة بغداد

الكلية

كلية العلوم

القسم الأكاديمي

قسم الفيزياء

دولة الجامعة

العراق

الدرجة العلمية

ماجستير

تاريخ الدرجة العلمية

2014

الملخص الإنجليزي

In this work a Tin Oxide (SnO2) UV photoconductive detector was fabricated.

The Tin Oxide nanopowder is prepared by chemical method and deposited on glass and porous silicon by dipping coating technique.

The structural , morphological, optical and electrical properties of the prepared SnO2 nanopowder are studied .

The structure of the nano powder are examined by X-ray diffraction (XRD) and found to be polycrystalline of tetragonal structure with strong crystalline orientation at (110 and 101).The optical energy gap is calculated by the absorption spectrum which gives a value of 3.78eVand 4.3eV.

The photoluminescence emission spectra of SnO2 nanoparticles at 280nm excitation, exhibit emission at 437nm.

The emission maximum of 437 nm is lower than the band gap of the SnO2 bulk.

The surface morphological studies demonstrate that SnO2 nanopowder deposited on PS is improved and the average particle size has determined from Scanning Probe Microscope, is about 73.65 nm.

The Hall measurements show that the nanopowder prepared in such conditions are n-type with carrier concentration (n) of a bout -1.273×1017 cm-3.

The I-V characteristics ( photoresponsivity , photocurrent gain and the normalized detectivity) of the fabricated detector are measured.

The performance of the fabricated detectors are taken under illumination of the SnO2 detector using light power 2.5mW and 385nm UV radiation.

The surface functionalization of the SnO2 deposited on porous silicon (PS) layer by polyamide nylon polymer has improved the photoresponsivity of the detector to 0.1 A/W.

The response time of fabricated detector was measured by illuminating the sample with UV radiation and its values was (0.052ms).

The normalized detectivity (D*) of the fabricated SnO2 UV detector at wavelength of 385 nm is found to be 1.8 ×1010 cm Hz1/2 W-1.

التخصصات الرئيسية

الفيزياء

عدد الصفحات

62

قائمة المحتويات

• APA
• MLA
• AMA

لغة النص

الإنجليزية

نوع البيانات

رسائل جامعية

رقم السجل

BIM-607260