Study the optical, electrical and structural properties of silicon-based CdTe solar cell

العناوين الأخرى

دراسة الخواص الكهربائية و الضوئية و التركيبية من لخلية شمسية من CdTe على قاعدة سليكونية

مقدم أطروحة جامعية

al-Husayni, Mustafa Muhammad Ali Husayn

مشرف أطروحة جامعية

Muhammad, Ghusun Hamid
Abd Allah, Manal Midhat

الجامعة

جامعة بغداد

الكلية

كلية العلوم

القسم الأكاديمي

قسم الفيزياء

دولة الجامعة

العراق

الدرجة العلمية

دكتوراه

تاريخ الدرجة العلمية

2013

الملخص الإنجليزي

This thesis describes the fabrication and characterization of CdTe/Si and CdTe/SiO2/Si devices along with the development of CdTe based solar cells.

Solar cells hold great hopes for use as an environmental friendly and economically viable renewable energy source.

For this purpose, thin film materials are being investigated by various research organizations and groups.

In this work we have investigated n-CdTe as an absorber, SiO2 as an ultrathin tunneling layer, p-Si as a substrate, ITO thin film as a window layer and front contact, and Au thin film to solve the back contact problem of Si (due to its high work function).

The structural, optical, and electrical properties of the CdTe layer separately and/or with the device structure were studied.

Structure of CdTe films was observed by X-ray, optical profilometer, and AFM analysis techniques.

It is observed that the CdTe films had zincblende structure.

These films showed a preferred orientation along the (111) axis.

The XRD patterns show increase in crystallinity of films as Ts and film thickness increase.

The grain size has also been calculated, it was found to be in the range of 14-29.1nm.

The adhesion force between the substrate and the thin film decreases when Ts and/or the thickness of the film increase.

AFM images of the surface topography of CdTe film show very good smoothness of the surface topography.

It is observed that CdTe films have a high absorption in the UV and visible regions.

The bandgap energy values obtained for the films are also in the range where these can be easily utilized for maximum output conversion efficiency.

For each sample two values of bandgap energy is obtained.

Optical constants are obtained from Ellipsometry data from which the viii behavior of refractive index n, extinction coefficient k, and real and imaginary parts of dielectric constant are demonstrated.

All films showed n-type conductivity during the Hall Effect measurement.

The obtained value of mobility is interestingly high.

From the D.C.

conductivity measurements, two values of activation energies were obtained.

I-V characterization for poly crystal CdTe based solar cells at different illumination levels are carried out, which showed 3.61% efficiency.

The effect of oxide layer on the device wasalso investigated

التخصصات الرئيسية

الفيزياء

عدد الصفحات

122

قائمة المحتويات

• APA
• MLA
• AMA

لغة النص

الإنجليزية

نوع البيانات

رسائل جامعية

رقم السجل

BIM-607778