Improvement of performance of modulation response and bandwidth of InAs-GaAs quantum-dot laser diode
العناوين الأخرى
تحسين أداء استجابة التضمين و عرض الحزمة لدايود ليزر نقط الكم نوع InAs-GaAs
المؤلفون المشاركون
Sahan, Jasim Muhammad
al-Tayyar, Thaira Zakariyya
Zibun, Hadi T.
المصدر
Engineering and Technology Journal
العدد
المجلد 33، العدد 6A (30 يونيو/حزيران 2015)، ص ص. 1314-1327، 14ص.
الناشر
تاريخ النشر
2015-06-30
دولة النشر
العراق
عدد الصفحات
14
التخصصات الرئيسية
الملخص EN
This paper proposes a design model of InAs QD laser diode structure, the dimensions of the proposed model have an active region of length 800 μm, width 12 μm, and a height of 375 nm.
The proposed model of QD is disk shaped, its height is 2nm and diameter is 14nm.
The QDs surface density per layer is 7×1012 cm-2, number of QDs layers are 5 layers, wetting layer thickness is 1nm and barrier thickness is 90nm.
The evaluation of the proposed model is based on rate equations model.
The InAs/GaAs QD lasers are capable of working at a very low threshold current, which is very important for the development of optical fiber communication systems.
Modulation characteristics of InAs/GaAs quantum dot (QD) lasers of 1.3μm wavelength have been carefully studied at various bias currents and K-factor, the (-3 dB) bandwidth is improved at first as increasing the injected current, in addition, at large injected current, maximum value of the bandwidth is limited by K-factor, and the K- factor is mainly determined by the photon lifetime and the effective capture time, the K-factor can be minimized by choosing an optimum photon lifetime.
The results show that the QD laser diode has a lower threshold current (2 mA), the threshold current density (20 A/cm2 ), bias voltage 0.92 V, while output optical power has the range of (0-25 mW), the slope efficiency is 0.25W/A.
The highest relaxation oscillation frequency at room temperature is 10.18 GHz, corresponding to a modulation bandwidth of 3 GHz due to the small damping factor.
Using these parameters, the maximum modulation bandwidth (f-3dBmax) is estimated as 15.56 GHz.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
al-Tayyar, Thaira Zakariyya& Zibun, Hadi T.& Sahan, Jasim Muhammad. 2015. Improvement of performance of modulation response and bandwidth of InAs-GaAs quantum-dot laser diode. Engineering and Technology Journal،Vol. 33, no. 6A, pp.1314-1327.
https://search.emarefa.net/detail/BIM-626913
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
al-Tayyar, Thaira Zakariyya…[et al.]. Improvement of performance of modulation response and bandwidth of InAs-GaAs quantum-dot laser diode. Engineering and Technology Journal Vol. 33, no. 6A (2015), pp.1314-1327.
https://search.emarefa.net/detail/BIM-626913
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
al-Tayyar, Thaira Zakariyya& Zibun, Hadi T.& Sahan, Jasim Muhammad. Improvement of performance of modulation response and bandwidth of InAs-GaAs quantum-dot laser diode. Engineering and Technology Journal. 2015. Vol. 33, no. 6A, pp.1314-1327.
https://search.emarefa.net/detail/BIM-626913
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references : p. 1327
رقم السجل
BIM-626913
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر