Synthesized Cu (In, Ga)‎ Se2 (CIGS)‎ thin films and implementation as the active light absorbing material in photovoltaic devices (PVs)‎

الملخص EN

This review article summarizes our research focused on Cu(In, Ga)Se2 (CIGS) nanocrystals, including their synthesis and implementation as the active light absorbing material in photovoltaic devices (PVs).

CIGS thin films were prepared by arrested precipitation from molecular precursors consisting of CuCl, InCl3, GaCl3 and Se metal onto Mo/soda-lime glass (SLG) substrates.

We have sought to use CIGS nanocrystals synthesized with the desired stoichiometry to deposit PV device layers without high temperature processing.

This approach, using spray deposition of the CIGS light absorber layers, without high temperature selenization, has enabled up to 1.5 % power conversion efficiency under AM 1.5 solar illumination.

The composition and morphology of CIGS thin films were studied using energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM), respectively.

X-ray diffraction (XRD) studies show that the structural formation of CIGS chalcopyrite structure.