Amorphous silicon light emitting diode quantum dots

العناوين الأخرى

السليكون العشوائي للثنائي الباعث للضوء من النقاط الكميه

مقدم أطروحة جامعية

Khalil, Wala Khalil Jamil

مشرف أطروحة جامعية

Abd al-Rida, Muwaffaq Kazim

الجامعة

جامعة بغداد

الكلية

كلية التربية للعلوم الصرفة-ابن الهيثم

القسم الأكاديمي

قسم الفيزياء

دولة الجامعة

العراق

الدرجة العلمية

ماجستير

تاريخ الدرجة العلمية

2015

الملخص الإنجليزي

In this work, theoretical calculations were used by considering the amorphous silicon quantum dots light emitting diode (a-SiQDs LED) as the device of investigation.

By these calculations, the effect of quantum confinement was a doped.

It is found that the light emission shows significant size dependence in the range (1-4) nm of the quantum dots.

The internal quantum efficiency is affected by temperature and it is more efficient at room temperature.

The energy gap can be tuned by controlling the size of a-SiQDs.

The blue shift is attributed to quantum confinement effect in a-SiQDs structure, where quantum confinements make silicon like candidate for full-color display.

It led to the interpretation that the a-SiQDs material has been changed to be a direct band gap material.

Internal quantum efficiency as a function of wavelength and injection current has been studied.

It is found that the obtained results are in good agreement with the experimental published data.

Therefore, a-SiQDs material was asserted to be a promising candidate for visible, tunable and high performance light emitting devices

التخصصات الرئيسية

الفيزياء

عدد الصفحات

72

قائمة المحتويات

• APA
• MLA
• AMA

لغة النص

الإنجليزية

نوع البيانات

رسائل جامعية

رقم السجل

BIM-735844