Effect of composition and thickness on the electrical behavior of Ge-Se-Sb-Te amorphous films

الملخص EN

The effect of replacement of Tellurium by Germanium on the electrical properties of Ge19-xSe63.8Sb17.2Tex (where x=0, 1, 3 and 5 at.

%) was studied.

Thin films with thickness in the range 500 – 3000 Ao were prepared by thermal evapora-tion.

It was found that the activation energy decreases with increasing Te content and also with thickness.

It was observed that the increase of Te was followed by an increase in the glass transition temperature.

In other words, the addition of Te de-creases the stability of the formed glass.

Increasing Te content was found to affect the average heat of atomization and cohesive energy (C.E) of the composition.