Electrical characterization of passivation layers for p-type multi crystalline silicon EWT solar cells by numerical simulation

الملخص EN

In this study, the dielectric effects on solar cell efficiency were investigated.

Different materials, such as Al2O3, HfO2, TiO2 and SiO2, were deposited by various techniques on the front side of a p-type EWT (Emitter Wrap Through) multi crystalline silicon (mc-Si) solar cell.

The passivated layer thickness was optimized using the software Matlab.

The recombination velocities utilized in the simulation were taken from the literature.

Using the software TCAD (2D) Silvaco/Atlas, the best results (for electrical parameters) were achieved with TiO2 (refractive index n = 2.6 at λ= 620 nm) for a thickness of 5 nm; a solar cell efficiency around 20.5% was obtained.