Characterization of n-CdO : Mg p-Si heterojunction dependence on annealing temperature

Abstract EN

In this research, thin films of CdO : Mg and n-CdO : Mg/ p-Si heterojunction with thickness (500 ± 50) nm have been deposited at R.T (300 K) by thermal evaporation technique.

These samples have been annealed at different annealing temperatures (373 and 473) K for one hour.

Structural, optical and electrical properties of {CdO : Mg (1 %)} films deposited on glass substrate as a function of annealing temperature are studied in detail.

The C-V measurement of n-CdO : Mg / p-Si heterojunction (HJ) at frequency (100 KHz) at different annealing temperatures have shown that these HJ were of abrupt type and the built-in potential (Vbi) increase as the annealing temperature increases.

The I-V characteristics of heterojunction prepared under dark case at different annealing temperatures show that the values of ideality factor and potential barrier height increase with the increase of annealing temperature.