Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor
Joint Authors
Sadeghi, Hatef
Lai, Daniel T. H.
Redoute, Jean-Michel
Zayegh, Aladin
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-04-16
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices.
The analytical models of quantum capacitance (QC) of BG and TG are presented.
Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale.
Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations.
However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields.
In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration.
Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases.
However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.
American Psychological Association (APA)
Sadeghi, Hatef& Lai, Daniel T. H.& Redoute, Jean-Michel& Zayegh, Aladin. 2013. Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor. Journal of Nanomaterials،Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-1007221
Modern Language Association (MLA)
Sadeghi, Hatef…[et al.]. Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor. Journal of Nanomaterials No. 2013 (2013), pp.1-7.
https://search.emarefa.net/detail/BIM-1007221
American Medical Association (AMA)
Sadeghi, Hatef& Lai, Daniel T. H.& Redoute, Jean-Michel& Zayegh, Aladin. Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor. Journal of Nanomaterials. 2013. Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-1007221
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1007221