A Tunable 3-Terminal GMR Device Based on a Hybrid Magnetic-Electric-Barrier Nanostructure
Joint Authors
Kong, Y. H.
Chen, S. Y.
Zhang, G. L.
Fu, X.
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-01-22
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
We propose a giant magnetoresistance (GMR) device, which can be experimentally realized by depositing two ferromagnetic (FM) strips and a Schottky metal (SM) stripe in parallel configuration on top of the GaAs heterostructure.
The GMR effect ascribes a significant electron transmission difference between the parallel and antiparallel magnetization configurations of two FM stripes.
Moreover, the MR ratio depends strongly on the magnetic strength of the magnetic barrier (MB) and the electric barrier (EB) height induced by an applied voltage to the SM stripe.
Thus, this system can be used as a GMR device with tunable MR by an applied voltage to SM stripe or by magnetic strength of the MB.
American Psychological Association (APA)
Kong, Y. H.& Chen, S. Y.& Zhang, G. L.& Fu, X.. 2013. A Tunable 3-Terminal GMR Device Based on a Hybrid Magnetic-Electric-Barrier Nanostructure. Journal of Nanomaterials،Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-1007662
Modern Language Association (MLA)
Kong, Y. H.…[et al.]. A Tunable 3-Terminal GMR Device Based on a Hybrid Magnetic-Electric-Barrier Nanostructure. Journal of Nanomaterials No. 2013 (2013), pp.1-5.
https://search.emarefa.net/detail/BIM-1007662
American Medical Association (AMA)
Kong, Y. H.& Chen, S. Y.& Zhang, G. L.& Fu, X.. A Tunable 3-Terminal GMR Device Based on a Hybrid Magnetic-Electric-Barrier Nanostructure. Journal of Nanomaterials. 2013. Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-1007662
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1007662
