P3HT:PCBM Incorporated with Silicon Nanoparticles as Photoactive Layer in Efficient Organic Photovoltaic Devices

Abstract EN

Silicon nanoparticles doped poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester blends (P3HT:PCBM: Si NP) have been produced as the photoactive layer of organic photovoltaic devices (OPVs).

The silicon nanoparticles’ size is between 80 and 100 nm checked by transmission electron microscope (TEM).

The 0.35 wt% Si NP doping OPVs exhibit higher power conversion efficiency (PCE) than other OPVs.

The PCE of the OPVs increases from 3.01% to 3.38% mainly due to increasing short-circuit current density from 8.38 to 9.48 mA/cm2, while the open-circuit voltage remains the same.

The Si NP can provide extra exciton separation and electron pathways in hybrid solar cells.