Electrical Characterization of NanopolyanilinePorous Silicon Heterojunction at High Temperatures

Abstract EN

Nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization.

The composition and morphology of the nanopolymer were confirmed using Fourier transform infrared, scanning electron microscopy, UV-visible, and transmission electron microscopy techniques.

The results indicated that the polymerization took place throughout the porous layer.

The I-V measurements, performed at different temperatures, enabled the calculation of ideality factor, barrier height, and series resistance of those films.

The obtained ideality factor showed a nonideal diode behavior.

The series resistance was found to decrease with increasing temperature.