Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs
Author
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-12-10
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
Long channel carbon nanotube transistor (CNT) can be used to overcome the high electric field effects in nanoscale length silicon channel.
When maximum electric field is reduced, the gate of a field-effect transistor (FET) is able to gain control of the channel at varying drain bias.
The device performance of a zigzag CNTFET with the same unit area as a nanoscale silicon metal-oxide semiconductor field-effect transistor (MOSFET) channel is assessed qualitatively.
The drain characteristic of CNTFET and MOSFET device models as well as fabricated CNTFET device are explored over a wide range of drain and gate biases.
The results obtained show that long channel nanotubes can significantly reduce the drain-induced barrier lowering (DIBL) effects in silicon MOSFET while sustaining the same unit area at higher current density.
American Psychological Association (APA)
Tan, Michael Loong Peng. 2013. Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs. Journal of Nanomaterials،Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-1008292
Modern Language Association (MLA)
Tan, Michael Loong Peng. Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs. Journal of Nanomaterials No. 2013 (2013), pp.1-5.
https://search.emarefa.net/detail/BIM-1008292
American Medical Association (AMA)
Tan, Michael Loong Peng. Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs. Journal of Nanomaterials. 2013. Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-1008292
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1008292