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Effect of Same-Temperature GaN Cap Layer on the InGaNGaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
Joint Authors
Zheng, Changda
Wang, Li
Mo, Chunlan
Fang, Wenqing
Jiang, Fengyi
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-12-04
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Medicine
Information Technology and Computer Science
Abstract EN
GaN green LED was grown on Si (111) substrate by MOCVD.
To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer.
Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface.
As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM).
The interface of MQWs turns to be abrupt from XRD analysis.
The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow.
American Psychological Association (APA)
Zheng, Changda& Wang, Li& Mo, Chunlan& Fang, Wenqing& Jiang, Fengyi. 2013. Effect of Same-Temperature GaN Cap Layer on the InGaNGaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate. The Scientific World Journal،Vol. 2013, no. 2013, pp.1-4.
https://search.emarefa.net/detail/BIM-1012489
Modern Language Association (MLA)
Zheng, Changda…[et al.]. Effect of Same-Temperature GaN Cap Layer on the InGaNGaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate. The Scientific World Journal No. 2013 (2013), pp.1-4.
https://search.emarefa.net/detail/BIM-1012489
American Medical Association (AMA)
Zheng, Changda& Wang, Li& Mo, Chunlan& Fang, Wenqing& Jiang, Fengyi. Effect of Same-Temperature GaN Cap Layer on the InGaNGaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate. The Scientific World Journal. 2013. Vol. 2013, no. 2013, pp.1-4.
https://search.emarefa.net/detail/BIM-1012489
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1012489